agalliumnitride(GaN)highelectronmobilitytransistor(HEMT)designedspecificallyforhighefficiency,highgainandwidebandwidthcapabilities,whichmakestheCGH55030F2/CGH55030P2idealforC-bandpulsedorCWsaturatedamplifiers.Thetransistorisavailableinbothscrew-down,flangeandsolder-down,pillpackages.Basedonappropriateexternalmatchadjustment,theCGH55030F2/CGH55030P2issuitableforapplicationsupto6GHz.
主要参数：
4.5to6.0GHzOperation
12dBSmallSignalGainat5.65GHz
30WtypicalPSAT
60%EfficiencyatPSAT
28VOperation
应用